Shih-Yen Lin 林時彥
Research Fellow

Ways to contact me:

E-mail:shihyengate.sinica.edu.tw
Phone:886-2-2787-3187
Fax: 886-2-2787-3122
Address: Research Center for Applied Sciences, Academia Sinica
128 Sec. 2, Academia Rd., Nankang, Taipei 11529, Taiwan
中央研究院應用科學研究中心
台北市11529南港區研究院路二段128號

Education:

Experience:

Research Fields:

  • Material Growth and Device Applications of 2-D Crystals
  • Molecular Beam Epitaxy, Optoelectronic Devices

Recent Publications:

  1. Kuan-Chao Chen, Tung-Wei Chu, Chong-Rong Wu, Si-Chen Lee and Shih-Yen Lin*, “Atomic Layer Etchings of Transition Metal Dichalcogenides with Post Healing Procedures: Equivalent Selective Etching of 2D Crystal Hetero-structures”, 2D Materials, vol. 4, no. 3, pp. 034001, June 2017.
    [ DOI:10.1088/2053-1583/aa75a7 ]
  2. Chong-Rong Wu, Xiang-Rui Chang, Chao-Hsin Wu, and Shih-Yen Lin*, “The Growth Mechanism of Transition Metal Dichalcogenides by using Sulfurization of Pre-deposited Transition Metals and the 2D Crystal Hetero-structure Establishment”, Sci. Rep. vol. 7, pp. 42146, February 2017.
    [ DOI:10.1038/srep42146 ]
  3. Hsuan-An Chen, Wei-Hsun Lin, Chiao-Yun Chang, Shu-Wei Chang, Min-Hsiung Shih, and Shih-Yen Lin*, “Type-I to Type-II Transformation of Hybrid Quantum Nanostructures”, IEEE J. Sel. Topics Quantum Electron., vol. 23, no. 5, pp. 1900407, September/October 2017.
    [ DOI:10.1109/JSTQE.2016.2629085 ]
  4. Kuan-Chao Chen, Tung-Wei Chu, Chong-Rong Wu, Si-Chen Lee, and Shih-Yen Lin*, “Layer Number Controllability of Transition-metal Dichalcogenides and The Establishment of Hetero-structures by Using Sulfurization of Thin Transition Metal Films”, J. of Phys. D: Appl. Phy., J. of Phys. D: Appl. Phy., vol. 50, no. 6, pp. 064001, February 2017.
    [ DOI:10.1088/1361-6463/aa52b6 ]
  5. Chong-Rong Wu, Kun-Cheng Liao, Chao-Hsin Wu, and Shih-Yen Lin*, “Luminescence Enhancement and Enlarged Dirac Point Shift of MoS2/Graphene Hetero-structure Photodetectors with Post-Growth Annealing Treatment”, Journal of Selected Topics in Quantum Electronics, vol. 23, no. 1, pp. 3800105, Jan.-Feb. 2017.
    [ DOI:10.1109/JSTQE.2016.2577519 ]
  6. Chong-Rong Wu, Kun Peng Dou, Cheng-Hung Wang, Chung-En Chang, Chao-Cheng Kaun, Chao-Hsin Wu and Shih-Yen Lin*, “Dual-Cut Graphene Transistors with Constant-current Regions Fabricated by Using the Atomic Force Microscope Anode Oxidation”, Jpn. J. Appl. Phys., vol. 56, no. 1, pp. 010307, January 2017.
    [ DOI:10.7567/JJAP.56.010307 ]
  7. Chong-Rong Wu, Xiang-Rui Chang, Tung-Wei Chu, Hsuan-An Chen, Chao-Hsin Wu, and Shih-Yen Lin*, “Establishment of 2D Crystal Heterostructures by Sulfurization of Sequential Transition Metal Depositions: Preparation, Characterization, and Selective Growth”, Nano Lett., vol. 16, no. 11, pp. 7093-7097, November 2016.
    [ DOI:10.1021/acs.nanolett.6b03353 ]
  8. Kuan-Chao Chen, Chong-Rong Wu, Xiang-Rui Chang, Shu-Wei Chang, Si-Chen Lee, and Shih-Yen Lin*, “Enhancement of field-effect mobility in molybdenum-disulfide transistor through the treatment of low-power oxygen plasma”, Jpn. J. Appl. Phys., vol. 55, no. 9, pp. 090302, September 2016.
    [ DOI:10.7567/JJAP.55.090302 ]
  9. Hsuan-An Chen, Tung-Chuan Shih, Hsuan-You Chen and Shih-Yen Lin*, “Enhanced Responsivity and Detectivity Values of Short 30-period InAs/GaSb Type-II Infrared Photodetectors with Reduced Device Areas”, Jpn. J. Appl. Phys., vol. 55, pp. 04EH07, March 2016.
    [ DOI:10.7567/JJAP.55.04EH07 ]
  10. Lung-Hsing Hsu, Chien-Ting Kuo, Jhih-Kai Huang, Shun-Chieh Hsu, Hsin-Ying Lee, Hao-Chung Kuo, Po-Tsung Lee, Yu-Lin Tsai, Yi-Chia Hwang, Chen-Feng Su, Jr-Hau He, Shih-Yen Lin, Yuh-Jen Cheng, and Chien-Chung Lin*, “An InN-Based Heterojunction Photodetector with Extended Infrared Response”, Optics Express, vol. 23, no. 24, pp. 31150-31162, November 2015.
    [ DOI:10.1364/OE.23.031150 ]
  11. Chong-Rong Wu, Xiang-Rui Chang, Shu-Wei Chang, Chung-En Chang, Chao-Hsin Wu, and Shih-Yen Lin*, “Multilayer MoS2 Prepared by One-time and Repeated Chemical Vapor Depositions: Anomalous Raman Shifts and Transistors with High ON/OFF Ratio”, J. of Phys. D: Appl. Phy., vol. 48, no. 43, pp. 435101, November 2015.
    [ DOI:10.1088/0022-3727/48/43/435101 ]
  12. Kung-Shu Hsu, Wei-Chun Hung, Chih-Chi Chang, Wei-Hsun Lin, Min-Hsiung Shih*, Po-Tsung Lee, Shih-Yen Lin, Shu-Wei Chang, and Yia-Chung Chang, “Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity”, Applied Phys. Lett. vol. 107, no. 9, pp. 091113, August 2015
    [ DOI:10.1063/1.4929948 ]
  13. Cheng-Han Wu, Hsuan-An Chen, Shih-Yen Lin and Chao-Hsin Wu* “1.1 μm InAs/GaAs Quantum-dot Light-emitting Transistors Grown by Molecular Beam Epitaxy”, Optics Letters, vol. 40, no. 16, pp. 3747-3749, August 2015.
    [ DOI:10.1364/OL.40.003747 ]
  14. Meng-Yu Lin, Cheng-Hung Wang, Shu-Wei Chang, Si-Chen Lee, and Shih-Yen Lin*, “Passivated Graphene Transistors Fabricated on Millimeter-sized Single-Crystal Graphene Film Prepared with Chemical Vapor Deposition”, J. of Phys. D: Appl. Phy., vol. 48, no. 29, pp. 295106, July 2015.
    [ DOI:10.1088/0022-3727/48/29/295106 ]
  15. Hsuan-An Chen, Tung- Chuan Shih, Shiang-Feng Tang, Ping-Kuo Weng, Yau-Tang Gau, and Shih-Yen Lin*, “GaSb/GaAs Quantum Dots and Rings Grown under Periodical Growth Mode by Using Molecular Beam Epitaxy”, J. Crystal Growth, vol. 425, no. 1, pp. 283-286, September 2015.
    [ DOI:10.1016/j.jcrysgro.2015.03.053 ]
  16. Meng-Yu Lin, Cheng-Hung Wang, Chun-Wei Pao, and Shih-Yen Lin*, “Transferring-Free and Large-Area Graphitic Carbon Film Growth by Using Molecular Beam Epitaxy at Low Growth Temperature”, J. Crystal Growth, vol. 425, no. 1, pp. 177-180, September 2015.
    [ DOI:10.1016/j.jcrysgro.2015.02.039 ]
  17. Hsuan-An Chen, Tung-Chuan Shih and Shih-Yen Lin*, "Long-Wavelength In-plane Gate InAs Quantum-Dot Photo-Transistors", IEEE Photonics Technology Lett., vol. 27, no. 3, pp. 261-263, February 2015.
    [ DOI:10.1109/LPT.2014.2367515 ]
  18. Meng-Yu Lin, Chung-En Chang, Cheng-Hung Wang, Chen-Fung Su, Chi Chen, Si-Chen Lee, and Shih-Yen Lin*, “Toward Epitaxially Grown Two-Dimensional Crystal Hetero-Structures: Single and Double MoS2/Graphene Hetero-Structures by Chemical Vapor Depositions”, Appl. Phys. Lett. vol. 105, no. 7, pp. 073501, August 2014.
    [ DOI:10.1063/1.4893448 ]
  19. Meng-Yu Lin, Chen-Fung Su, Si-Chen Lee, and Shih-Yen Lin*, “The Growth Mechanisms of Graphene Directly on Sapphire Substrates by Using the Chemical Vapor Deposition”, J. Appl. Phys., vol. 115, no. 22, pp. 223510, June 2014.
    [ DOI:10.1063/1.4883359 ]
  20. Meng-Yu Lin, Yen-Hao Chen, Cheng-Hung Wang, Chen-Fung Su, Shu-Wei Chang*, Si-Chen Lee, and Shih-Yen Lin*, “Field Effect of In-plane Gates with Different Gap Sizes on the Fermi Level Tuning of Graphene Channels”, Appl. Phys. Lett. vol. 104, no. 18, pp. 183503, May 2014.
    [ DOI:10.1063/1.4875583 ]
  21. Che-Pin Tsai, Shun-Chieh Hsu, Shih-Yen Lin, Ching-Wen Chang, Li-Wei Tu, Kun-Cheng Chen, Tsong-Sheng Lay, and Chien-Chung Lin*, “Type II GaSb quantum ring solar cells under concentrated sunlight”, Optics Express vol. 22, no. S2, pp. A359–A364, March 2014.
    [ DOI:10.1364/OE.22.00A359 ]
  22. Shiang-Feng Tang, Tzu-Chiang Chen, Wen-Jen Lin* and Shih-Yen Lin, “High Temperature Operation In(Ga)As Quantum Dot Infrared Photodetector Focal Plane Arrays Passivated with 6.5 nm-thick Al2O3 Layer”, International Journal of Nanotechnology, vol. 11, no. 1-4, pp. 345-358, March 2014.
    [ DOI:10.1504/IJNT.2014.059835 ]
  23. Meng-Yu Lin, Yen-Hao Chen, Chen-Fung Su, Shu-Wei Chang, Si-Chen Lee, and Shih-Yen Lin*, “Fermi-level shifts in graphene transistors with dual-cut channels scraped by atomic force microscope tips”, Appl. Phys. Lett. vol. 104, no. 2, pp. 023511, January 2014.
    [ DOI:10.1063/1.4862275 ]
  24. Jheng-Han Lee, Zong-Ming Wu, Yu-Min Liao, Yuh-Renn Wu, Shih-Yen Lin, and Si-Chen Lee*, “The operation principle of the well in quantum dot stack infrared photodetector”, J. Appl. Phys. vol. 114, no. 24, pp. 244504, December 2013.
    [ DOI:10.1063/1.4849875 ]
  25. Yu-An Liao, Yi-Kai Chao, Shu-Wei Chang*, Wen-Hao Chang, Jen-Inn Chyi and Shih-Yen Lin*, “Memory Device Application of Wide-channel In-plane Gate Transistors with Type-II GaAsSb-capped InAs Quantum Dots”, Appl. Phys. Lett. vol. 103, no. 14, pp. 143502, September 2013.
    [ DOI:10.1063/1.4824067 ]
  26. T. Nowozin, A. Wiengarten, L. Bonato, D. Bimberg*, Wei-Hsun Lin, Shih-Yen Lin, M. N. Ajour, K. Daqrouq, and A. S. Balamesh, “Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots”, Journal of Nanotechnology vol. 2013, Article ID 302647, 5 pages (2013).
    [ DOI:10.1155/2013/302647 ]
  27. Wei-Hsun Lin, Kai-Wei Wang, Yu-An Liao, Chun-Wei Pao and Shih-Yen Lin*, “The Formation Mechanisms and Optical Characteristics of GaSb Quantum Rings”, J. Appl. Phys. vol. 114, no. 5, pp. 053509, August 2013.
    [ DOI:10.1063/1.4817419 ]
  28. Meng-Yu Lin, Wei-Ching Guo, Meng-Hsun Wu, Pro-Yao Wang, Si-Chen Lee and Shih-Yen Lin*, “Graphene Films Grown at Low Substrate Temperature and The Growth Model by Using MBE Technique”, J. Crystal Growth vol. 378, no. 1, pp. 333-336, September 2013.
    [ DOI:10.1016/j.jcrysgro.2012.12.068 ]
  29. Wei-Hsun Lin, Kai-Wei Wang, Shih-Yen Lin* and Meng-Chyi Wu, “Long-Wavelength Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum-Rings at Room Temperature”, J. Crystal Growth vol. 378, no. 1, pp. 571-575, September 2013.
    [ DOI:10.1016/j.jcrysgro.2012.12.066 ]
  30. Wei-Hsun Lin, Kai-Wei Wang, Shih-Yen Lin* and Meng-Chyi Wu, “Temperature-Dependent Photoluminescence and Carrier Dynamics of Standard and Coupled Type-II GaSb/GaAs Quantum Rings”, J. Crystal Growth vol. 378, no. 1, pp. 426-429, September 2013.
    [ DOI:10.1016/j.jcrysgro.2012.12.069 ]
  31. Yu-An Liao, Wei-Hsun Lin, Yi-Kai Chao, Wen-Hao Chang, Jen-Inn Chyi, and Shih-Yen Lin*, “In-Plane Gate Transistors for Photodetector Applications”, IEEE Electron Device Lett. vol. 34, no. 6, pp. 780-782, June 2013.
    [ DOI:10.1109/LED.2013.2258456 ]
  32. T. Nowozin, L. Bonato, Hogner, A. Wiengarten, D. Bimberg, Wei-Hsun Lin, Shih-Yen Lin, C. J. Reyner, Baolai L. Liang, and D. L. Huffaker, “800meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots”, Appl. Phys. Lett. vol. 102, no. 5, pp. 052115, February 2013.
    [ DOI:10.1063/1.4791678 ]
  33. Wei-Hsun Lin, Kai-Wei Wang, Shih-Yen Lin* and Meng-Chyi Wu, “Improved 1.3 um Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature”, IEEE Photonics Technology Lett. vol. 25, no. 1, pp. 97-99, January 2013.
    [ DOI:10.1109/LPT.2012.2229700 ]
  34. Meng-Yu Lin, Wei-Ching Guo, Meng-Hsun Wu, Pro-Yao Wang, Te-Huan Liu, Chun-Wei Pao, Chien-Cheng Chang, Si-Chen Lee and Shih-Yen Lin*, “Low-temperature grown graphene films by using molecular beam epitaxy”, Appl. Phys. Lett. vol. 101, no. 22, pp. 221911, November 2012.
    [ DOI:10.1063/1.4768948 ]

Patents:

  1. “Transition Metal Dichalcogenide Transistors with Nanometer-Size Channel Lengths Fabricated on 2-D Crystal Hetero-structures”, US patent 9577049 (Date of patent: February 21, 2017).
  2. “Fermi Level Tuning of Graphene Transistors by Using In-plane Gates”, US and China patents, U.S. patent 9525072 B2 (Date of patent: December 20, 2016)
  3. “藉由物理氣相沉積法在基板上成長碳薄膜或無機材料薄膜的方法”, 臺灣專利發明第 I 526559 號 (專利權期間: 2016.3.21-2032.4.5)
  4. “石墨烯薄膜及電晶體的石墨烯通道之製備方法”, 臺灣專利發明第 I 503276 號 (專利權期間: 2015.10.11-2033.3.12)
  5. “METHOD FOR MANUFACTURING GRAPHENE FILM AND GRAPHENE CHANNEL OF TRANSISTOR”, U.S. patent 9029190 B2 (May 12, 2015)
  6. “具有砷化銦鎵覆蓋層之長波長量子點紅外線偵測器”, 發明第I458576 號臺灣專利 (專利權期間: 2014.11.1-2029.9.24)
  7. “量子點及量子井混合模式紅外線偵測器裝置及其形成方法”, 臺灣專利 (發明I400813號) (專利權期間: 2013.7.1-2028.8.25)
  8. “Vertical Organic Transistor and Method of Fabricating the Same,” U.S. Patent 7560728.
  9. “垂直有機電晶體及其製造方法”, 臺灣專利 (發明I299904號)
  10. “量子點紅外線偵測器”, 臺灣專利 (發明I269355 號) (專利權期間: 2006.12.21-2024.12.28).
  11. “高溫操作量子點紅外線偵檢器結構設計製作 (Structure Design and Fabrication of High-Temperature Operated Quantum Dot Infrared Photodetector)” 臺灣專利 (發明第480591號)